PTFA212401E V4 R250

PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 Features -30 35 • Thermally-enhanced packages, Pb-free and RoHS compliant • Broadband internal matching • Typical two-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8 dB - Average output power = 47.0 dBm - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35 dBc - Adjacent channel power = –40 dBc • Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, PAR = 8.5 dB - Average output power = 49 dBm - Linear Gain = 15.8 dB - Efficiency = 34% - Adjacent channel power = –33 dBc • Typical CW performance, 2140 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 54% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 5:1 VSWR @ 30 V, 240 W (CW) output power 30 -35 ACPR Up 25 -40 ACPR Low -45 20 15 -50 -55 10 Efficiency Drain Efficiency (%) Adjacent Channel Power Ratio (dB) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.5 dB, 3.84 MHz BW 5 -60 36 38 40 42 44 46 48 Average Output Power (dBm) All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution RF Characteristics Two-Carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 14.8 15.8 — dB Drain Efficiency ηD 26 28 — % Intermodulation Distortion IMD — –35.0 –33 dBc Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ1 = 2140 MHz, ƒ2 = 2141 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 15.8 — dB Drain Efficiency ηD — 38.5 — % Intermodulation Distortion IMD — –28 — dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 30 V, V GS = 0 V IDSS — — 1.0 µA VDS = 63 V, V GS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) — 0.03 — Ω Operating Gate Voltage VDS = 30 V, IDQ = 1.6 A VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Total Device Dissipation PD 761 W 4.35 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 50 W Average WCDMA) RθJC 0.23 °C/W Data Sheet 2 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Ordering Information Type and Version Package Outline Package Description Shipping PTFA212401E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended Tray PTFA212401F V4 H-37260-2 Thermally-enhanced earless flange, single-ended Tray Typical Performance (data taken in a production test fixture) Two-carrier WCDMA at Selected Biases Broadband Performance VDD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, series show IDQ VDD = 30 V, IDQ = 1600 mA, POUT = 50 W 40 2.0 A 2.2 A 1.8 A -40 -45 1.4 A -50 1.6 A 34 36 38 40 42 44 35 46 -10 Return Loss 30 -15 25 -20 Efficiency 20 -25 15 10 2050 -55 -5 -30 Gain 2080 2110 2140 2170 Input Return Loss (dB) -35 Gain (dB), Efficiency (%) 3rd Order IMD (dBc) -30 -35 2200 Frequency (MHz) Output Power, PEP (dBm) *See Infineon distributor for future availability. Data Sheet 3 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Typical Performance (cont.) Intermodulation Distortion Products vs. Tone Spacing Power Sweep, CW Conditions VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz 65 16 55 Gain 15 45 14 35 TCASE = 25°C 13 25 Efficiency TCASE = 90°C 12 0 40 80 120 160 200 15 240 Intermodulation Distortion (dBc) 17 Drain Efficiency (%) Gain (dB) VDD = 30 V IDQ = 1600 mA , ƒ = 2140 MHz, POUT = 53 dBm PEP -20 -25 3rd Order -30 -35 7th -40 -45 -50 5th -55 0 5 10 IDQ = 1600 mA, ƒ = 2140 MHz, tone spacing = 1 MHz, Output Power (PEP) = 53 dBm 50 30 -30 IM3 Up -40 20 Gain -50 10 30 Intermodulation Distortion (dBc) 40 40 Up Low -30 IM3 IM5 -40 -50 IM7 -60 10 32 100 1000 Output Power, PEP (W) Supply Voltage (V) Data Sheet 35 ƒ 1 = 2137.5 MHz, ƒ2 = 2142.5 MHz -20 Gain (dB), Drain Efficiency (%) 3rd Order IMD (dBc) -20 28 30 VDD = 30 V, IDQ = 1600 mA, Efficiency 26 25 Intermodulation Distortion Products vs. Output Power Voltage Sweep 24 20 Tone Spacing (MHz) Output Power (W) -10 15 4 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Typical Performance (cont.) Output Peak-to-Average Ratio Compression (PARC) at various Power Levels Power Gain vs. Power Sweep (CW) over Temperature VDD = 30 V, IDQ = 1600 mA, ƒ = 2170 MHz, single-carrier WCDMA input PAR = 7.5 dB VDD = 30 V, IDQ = 1500 mA, ƒ = 2140 MHz 100 18 Power Gain (dB) 48 dBm 1 46 dBm 52 dBm 0.1 Input 51 dBm 0.01 25C 16 85C 15 14 13 50 dBm 0.001 12 1 2 3 4 5 6 7 8 1 10 Two-tone Drive-up Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, tone spacing = 1 MHz VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25 -25 50 45 Efficiency -35 40 IM3 -40 35 IM5 -45 30 -50 25 -55 20 IM7 -60 IM3 (dBc), ACPR (dBc) -30 15 -65 46 48 50 52 35 30 IM3 -35 25 -40 20 -45 15 ACPR -50 10 5 34 54 Output Power, PEP (dBm) Data Sheet Efficiency -30 -55 10 44 1000 Output Power (W) Drain Efficiency (%) Intermodulation Distortion (dBc) Peak-to-Average (dB) 100 Drain Efficiency (%) Probability (%) -15C 17 10 36 38 40 42 44 46 48 Output Power, avg. (dBm) 5 of 11 Rev. 04, 2009-10-05 PTFA212401E PTFA212401F Confidential, Limited Internal Distribution Typical Performance (cont.) Bias Voltage vs. Temperature Normalized Bias Voltage (V) Voltage normalized to typical gate voltage, series show current 1.03 0.44 A 1.02 1.32 A 2.20 A 1.01 3.30 A 1.00 6.61 A 0.99 9.91 A 0.98 13.22 A 0.97 16.52 A 0.96 0.95 -20 0 20 40 60 80 100 Case Temperature (°C) --> Broadband Circuit Impedance Z0 = 50 Ω GEN E RA T OR - 0.2 D Z Load A RD Z Source Z Load 0 .1 2200 M H z G R jX 2080 10.050 –4.250 1.140 2.07 2110 9.750 –4.320 1.080 2.38 2140 9.500 –4.380 1.090 2.65 2170 9.280 –4.350 1.130 2.89 2200 9.000 –4.460 1.450 3.11 Data Sheet 6 of 11 0.1 0.1 W jX